The amorphous-to-crystalline transition was investigatedby in situ temperature-dependent resistance (R-T) measurement using a TP 95 temperature controller (LinkamScientic Instruments Ltd., Surrey, UK) at a heating rate of10°C/min. e size of each measured thin lm is 1 cm × 1 cm.e electrode made up of Si3N4 is set up on the surface of thesample with...

The crystallization temperature of the thin films could be obtainedby measuring the change of the resistance of the sample during theheating process through the in-situ resistance-temperature (R-T) testsystem. By studying the isothermal crystallization process at differenttemperatures, the crystal activation energy (Ec) and...