Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials
2026-01-28
The dependence of the resistance on the temperature (ReT) of the multilayer ZS/SO and monolayer ZnSb materials were measuredin situ in a homemade vacuum chamber with a TP 94 temperaturecontroller (Linkam Scientific Instruments Ltd, Surrey, UK). The dataretention ability of the amorphous state was estimated. Diffusereflectance spectra were recorded by a near infrared spectroscopy(NIR, 7100CRT, XINMAO, China) spectrophotometer in the wavelength range of 400e2500 nm. The crystalline phase structure wasanalyzed by X-ray diffraction (XRD, PANalytical, X'PERT Powder)with Cu Ka radiation in the 2q range from